A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology

被引：21

作者：

Kallfass, I. ^{[1
]}

Pahl, P. ^{[1
]}

Massler, H. ^{[1
]}

Leuther, A. ^{[1
]}

Tessmann, A. ^{[1
]}

Koch, S. ^{[2
]}

Zwick, T. ^{[3
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[2] Sony Deutsch GmbH, Sensing Syst Lab, D-70327 Stuttgart, Germany

[3] Univ Karlsruhe TH, D-76131 Karlsruhe, Germany

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2009年 / 19卷 / 06期

关键词：

G-band; mHEMT; millimeter-wave field effect transistor (FET) integrated circuits (ICs); millimeter-wave power amplification; monolithic microwave integrated circuits (MMICs); MMICS;

D O I：

10.1109/LMWC.2009.2020042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 186 and 212 GHz is presented. The amplifier, dedicated to high-resolution imaging radar and communication systems, is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. The three-stage design with four parallel transistors in the output stage achieves a linear gain of more than 12 dB and provides a saturated output power of more than 9 dBm and 7 dBm at 192 and 200 GHz, respectively.

引用

页码：410 / 412

页数：3

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