Properties and mechanism study of Ag doped SnO2 thin films as H2S sensors

被引：63
|
作者：
Liu, CH
Zhang, L
He, YJ
机构：
[1] Department of Physics, Tsinghua University
来源：
THIN SOLID FILMS | 1997年 / 304卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
tin oxide; gas sensors; hydrogen sulphide; semiconductors;
D O I：
10.1016/S0040-6090(97)00107-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ag doped tin oxide thin films were prepared by evaporating the mixture of SnO2, and Ag powder. The granular film with a high Ag incorporation (16 at.%) was found to possess excellent sensitivity, selectivity and rapid response to the presence of H2S gas at low temperature. X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray analysis were carried out to investigate the sensing mechanism. The film was composed of tin oxide with oxygen deficiency (Sn3O4) and Ag2O crystals. Direct evidence of H2S adsorption on the Ag2O grain surface was observed. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：13 / 15
页数：3
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