SOI monolithic pixel detector

被引：4

作者：

Miyoshi, T. ^{[1
]}

Ahmed, M. I. ^{[2
]}

Arai, Y. ^{[1
]}

Fujita, Y. ^{[1
]}

Ikemoto, Y. ^{[1
]}

Takeda, A. ^{[3
]}

Tauchi, K. ^{[1
]}

机构：

[1] High Energy Accelerator Res Org KEK, Tsukuba, Ibaraki, Japan

[2] AGH Univ Sci & Technol, Krakow, Poland

[3] Grad Univ Adv Studies SOKENDAI, Tsukuba, Ibaraki, Japan

来源：

JOURNAL OF INSTRUMENTATION | 2014年 / 9卷

关键词：

Solid state detectors; X-ray detectors; Inspection with x-rays; X-ray radiography and digital radiography (DR); PROCESS TECHNOLOGY;

D O I：

10.1088/1748-0221/9/05/C05044

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We are developing monolithic pixel detector using fully-depleted (FD) silicon-on-insulator (SOI) pixel process technology. The SOI substrate is high resistivity silicon with p-n junctions and another layer is a low resistivity silicon for SOI-CMOS circuitry. Tungsten vias are used for the connection between two silicons. Since flip-chip bump bonding process is not used, high sensor gain in a small pixel area can be obtained. In 2010 and 2011, high-resolution integration-type SOI pixel sensors, DIPIX and INTPIX5, have been developed. The characterizations by evaluating pixel-to-pixel crosstalk, quantum efficiency (QE), dark noise, and energy resolution were done. A phase-contrast imaging was demonstrated using the INTPIX5 pixel sensor for an X-ray application. The current issues and future prospect are also discussed.

引用

页数：9

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