Real-time carbon content control for PECVD ZrO2 thin-film growth

被引:20
作者
Ni, D [1 ]
Lou, YM
Christofides, PD
Sha, L
Lao, S
Chang, JP
机构
[1] Univ Calif Los Angeles, Proc Control Grp, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Elect Mat Synth & Plasma Proc Lab, Los Angeles, CA 90095 USA
关键词
carbon content; OES; PECVD; real-time feedback control; thin-film growth; XPS; ZrO2;
D O I
10.1109/TSM.2004.826939
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a methodology for real-time control of thin-film carbon content in a plasma-enhanced metal-organic chemical vapor deposition process using combination of online gas phase measurements obtained through optical emission spectroscopy and off-line (ex situ) measurements of film composition obtained via X-ray photoelectron spectroscopy (XPS). Initially, an estimation model of carbon content of ZrO2 thin films based on real-time optical emission spectroscopy data is presented. Then, a feedback control scheme, which employs the proposed estimation model and a proportional-integral controller, is developed to achieve carbon content control. Using this approach, a real-time control system is developed and implemented on an experimental electron cyclotron resonance high-density plasma-enhanced chemical vapor deposition system to demonstrate the effectiveness of real-time feedback control of carbon content. Experimental results of depositions and XPS analysis of deposited thin films under both open-loop and closed-loop operations are shown and compared. The advantages of operating the process under real-time feedback control in terms of robust operation and lower carbon content are demonstrated.
引用
收藏
页码:221 / 230
页数:10
相关论文
共 25 条
[1]   Plasma enhanced chemical vapor deposition: Modeling and control [J].
Armaou, A ;
Christofides, PD .
CHEMICAL ENGINEERING SCIENCE, 1999, 54 (15-16) :3305-3314
[2]   Feedback control of plasma etching reactors for improved etching uniformity [J].
Armaou, A ;
Baker, J ;
Christofides, PD .
CHEMICAL ENGINEERING SCIENCE, 2001, 56 (04) :1467-1475
[3]   Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications [J].
Chaneliere, C ;
Autran, JL ;
Devine, RAB ;
Balland, B .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1998, 22 (06) :269-322
[4]   Metalorganic precursor decomposition and oxidation mechanisms in plasma-enhanced ZrO2 deposition [J].
Cho, BO ;
Wang, JJ ;
Chang, JP .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) :4238-4244
[5]   Spectroscopic study of plasma using zirconium tetra-tert-butoxide for the plasma enhanced chemical vapor deposition of zirconium oxide [J].
Cho, BO ;
Lao, S ;
Sha, L ;
Chang, JP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (06) :2751-2761
[6]  
CHRISTOFIDES PD, 2001, NONLINAR ROBUST CONT
[7]   OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].
COBURN, JW ;
CHEN, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3134-3136
[8]   Structure and stability of ultrathin zirconium oxide layers on Si(001) [J].
Copel, M ;
Gribelyuk, M ;
Gusev, E .
APPLIED PHYSICS LETTERS, 2000, 76 (04) :436-438
[9]  
Coughanowr D.R., 1991, PROCESS SYSTEMS ANAL
[10]   Intelligent process control of indium tin oxide sputter deposition using optical emission spectroscopy [J].
Eisgruber, IL ;
Engel, JR ;
Hollingsworth, RE ;
Bhat, PK ;
Wendt, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (01) :190-197