Basal-plane thermal conductivity of few-layer molybdenum disulfide

被引：147

作者：

Jo, Insun ^{[1
]}

Pettes, Michael Thompson ^{[1
,2
,3
]}

Ou, Eric ^{[1
]}

Wu, Wei ^{[2
,3
]}

Shi, Li ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

[2] Univ Connecticut, Dept Mech Engn, Storrs, CT 06269 USA

[3] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 20期

关键词：

TEMPERATURE-DEPENDENT RAMAN; PHONON TRANSPORT; SCATTERING; GRAPHENE; RESISTANCE;

D O I：

10.1063/1.4876965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the in-plane thermal conductivity of suspended exfoliated few-layer molybdenum disulfide (MoS2) samples that were measured by suspended micro-devices with integrated resistance thermometers. The obtained room-temperature thermal conductivity values are (44-50) and (48-52) W m(-1) K-1 for two samples that are 4 and 7 layers thick, respectively. For both samples, the peak thermal conductivity occurs at a temperature close to 120 K, above which the thermal conductivity is dominated by intrinsic phonon-phonon scattering although phonon scattering by surface disorders can still play an important role in these samples especially at low temperatures. (C) 2014 AIP Publishing LLC.

引用

页数：4

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