Analytical modeling of thermal noise in deep submicron MOSFETs

被引：1

作者：

Lu, Zhi-Qiang ^{[1
]}

Lai, Feng-Chang ^{[1
]}

机构：

[1] Harbin Inst Technol, Ctr Microelect, Harbin 150006, Heilongjiang, Peoples R China

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2009年 / 59卷 / 02期

关键词：

Analytical modeling; Thermal noise; MOSFET noise; Noise parameters; CHANNEL NOISE;

D O I：

10.1007/s10470-008-9248-8

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An analytical modeling of MOSFETs channel noise is proposed by considering short-channel effects of deep submicron MOSFETs, such as mobility degradation, hot carrier, bulk charge, and channel length modulation effect. The model is only dependent on bias, size, and technology of MOSFETs, and hence is suitable for low-noise RF IC design. Noise parameters of MOSFETs are achieved and good agreement between calculated and measured results is demonstrated.

引用

页码：185 / 189

页数：5

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