Phase transition current of antiferroelectric (Pb0.97La0.02)(Zr0.95Ti0.05)O3 thick films under thermo-electric coupled field

被引：6
作者：
An, Kun [1 ]
Li, Peiqing [3 ]
Chen, Donghong [3 ]
Chou, Xiujian [1 ,2 ]
Xue, Chenyang [2 ,3 ]
Liu, Jun [1 ,3 ]
Zhang, Wendong [1 ]
机构：
[1] Natl Key Lab Elect Measurement Technol, Taiyuan, Peoples R China
[2] North Univ China, Minist Educ, Key Lab Instrumentat Sci & Dynam Measurement, Taiyuan, Peoples R China
[3] North Univ China, Sch Instrumentat Elect, Taiyuan, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2014年 / 180卷
基金：
中国国家自然科学基金;
关键词：
Antiferroelectric; Thick films; Phase transition current; Thermo-electric coupled field; ELECTRICAL-PROPERTIES;
D O I：
10.1016/j.ssc.2013.11.018
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Antiferroelectric (Pb, La)(Zr, Ti)O-3 multilayer thick films with thickness of 3817 nm were fabricated by sol-gel processing on Pt(111)/Ti/SiO2/Si(100) substrates. The characteristics of the phase transition current induced by temperature and transient pulse electric field were further investigated in detail. It showed that the phase transition current density was about 1.25 x 10(-6) A/cm(2) in the thermo-electric coupled field, which was 10 times smaller than that in a single temperature or electric field. In addition, the transient phase transition current density induced by pulse voltage was up to 2.48 x 10(-5) A/cm(2), which could be used as the trigger signals in sensor and micro switch in the complicated circumstance. At the same Lime, the results showed that the films had good reproducibility and stability by many repeated experiments. These results were very important for the antiferroclectric materials applied on micro electromechanical systems (MEMS) devices. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：64 / 67
页数：4
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