Assessment of the intrinsic nature of deep level Z1/Z2 by compensation effects in proton-irradiated 4H-SiC

被引：36

作者：

Castaldini, A. ^{[1
]}

Cavallini, A. ^{[1
]}

Rigutti, L. ^{[1
]}

机构：

[1] Univ Bologna, Dipartimento Fis, I-40127 Bologna, Italy

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 06期

关键词：

D O I：

10.1088/0268-1242/21/6/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present study investigates compensation phenomena induced by proton irradiation in 4H silicon carbide. The introduction of defects in the material and the compensation of charge density are modelled according to the participation of shallow dopant (N) atoms to the structure of the introduced defect. Combined analysis of in-depth capacitance-voltage (C-V) profiling and deep level transient spectroscopy (DLTS) is carried out. From the results, we conclude that deep level Z(1)/Z(2) has an intrinsic nature, rather than being related to a nitrogen-complex.

引用

页码：724 / 728

页数：5

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