Growth of highly oriented γ- and α-Al2O3 thin films by pulsed laser deposition

被引：13
作者：
Balakrishnan, G. [1 ,2 ]
Babu, R. Venkatesh [2 ]
Shin, K. S. [3 ]
Song, J. I. [1 ]
机构：
[1] Changwon Natl Univ, Dept Mech Engn, Chang Won 641773, Gyeongsangnam, South Korea
[2] Bharath Univ, Dept Mech Engn, Madras 600073, Tamil Nadu, India
[3] Changwon Natl Univ, Dept Mat Sci & Engn, Chang Won 641773, Gyeongsangnam, South Korea
来源：
OPTICS AND LASER TECHNOLOGY | 2014年 / 56卷
基金：
新加坡国家研究基金会;
关键词：
Alumina thin films; Pulsed laser deposition; X-ray diffraction; EPITAXIAL-GROWTH; ALUMINA FILMS; AL2O3; FILM; GAMMA-AL2O3; COATINGS; OXIDE;
D O I：
10.1016/j.optlastec.2013.08.014
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Highly oriented aluminum oxide (Al2O3) thin films were grown on SrTiO3 (100), alpha-Al2O3 (1 (1) over bar 02), alpha-Al2O3 (0001) and MgO (100) single crystal substrates at an optimized oxygen partial pressure of 3.5 x 10(-3) mbar and 700 degrees C by pulsed laser deposition. The films were characterized by X-ray diffraction and atomic force microscopy. The X-ray diffraction studies indicated the highly oriented growth of gamma-Al2O3 (400) parallel to SrTiO3 (100), alpha-Al2O3 (024) parallel to alpha-Al2O3 (1 (1) over bar 02), alpha-Al2O3 (006) parallel to alpha-Al2O3 (0001) and alpha-Al2O3 a (006) parallel to MgO (100). Formation of nanostructures with dense and smooth surface morphology was observed using atomic force microscopy. The root mean square surface roughness of the films were 0.2 nm, 0.5 nm, 0.7 nm and 0.3 nm on SrTiO3 (100), alpha-Al2O3 (1 (1) over bar 02), alpha-Al2O3 (0001) and MgO (100) substrates, respectively. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：317 / 321
页数：5
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