Nanoscale surface roughness contribution to the Kapitza resistance between superfluid He and silicon

被引：10

作者：

Amrit, J ^{[1
]}

François, MX ^{[1
]}

机构：

[1] CNRS, LIMSI, F-91403 Orsay, France

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2002年 / 128卷 / 3-4期

关键词：

D O I：

10.1023/A:1016341826786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements of the Kapitza resistance have been made on single Si(001) crystals at T > 1.5 K. The surface morphology of the samples was characterised by Atomic Force Microscopy (AFM). The results, interpreted using the Adamenko and Fuks (AF) model, demonstrate that nanometre-scale roughness produces diffuse and/or resonant phonon scattering. This explains the discrepancy between the measured Kapitza resistance and the Khalatnikov values.

引用

页码：113 / 121

页数：9

共 13 条

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