Electrical Instability of Double-Gate a-IGZO TFTs With Metal Source/Drain Recessed Electrodes

被引：19

作者：

Baek, Gwanghyeon ^{[1
]}

Bie, Linsen ^{[1
]}

Abe, Katsumi ^{[2
,3
]}

Kumomi, Hideya ^{[2
]}

Kanicki, Jerzy ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Displays & Detectors Lab, Ann Arbor, MI 48109 USA

[2] Canon Inc, Canon Res Ctr, Tokyo 1468501, Japan

[3] Tokyo Inst Technol, Yokohama, Kanagawa 2260026, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 04期

关键词：

Amorphous indium-gallium-zinc-oxide (a-IGZO); bias temperature stress (BTS); double gate (DG); single gate (SG); thin-film transistor (TFT);

D O I：

10.1109/TED.2014.2307352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical stability of double-gate (DG) and single-gate (SG) amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) with metal source/drain recessed electrodes on glass is investigated and compared. In the device structure of the a-IGZO TFTs, both top gate and bottom gate are defined by lithography, allowing independent or synchronized biasing. Bias temperature stress (BTS) are performed on SG a-IGZO TFTs and DG a-IGZO TFTs with synchronized gate bias condition. Under both positive and negative BTS, synchronized DG a-IGZO TFTs demonstrate much smaller Delta V-TH shift than SG a-IGZO TFTs.

引用

页码：1109 / 1115

页数：7

共 20 条

[1] Amorphous In-Ga-Zn-O Dual-Gate TFTs: Current-Voltage Characteristics and Electrical Stress Instabilities [J].

Abe, Katsumi ;

Takahashi, Kenji ;

Sato, Ayumu ;

Kumomi, Hideya ;

Nomura, Kenji ;

Kamiya, Toshio ;

Kanicki, Jerzy ;

Hosono, Hideo .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (07) :1928-1935

[2] Modeling of currentuvoltage characteristics for double-gate a-IGZO TFTs and its application to AMLCDs [J].

Baek, Gwanghyeon ;

Kanicki, Jerzy .

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2012, 20 (05) :237-244

[3] Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors and Its Application to AM-OLEDs [J].

Baek, Gwanghyeon ;

Abe, Katsumi ;

Kuo, Alex ;

Kumomi, Hideya ;

Kanicki, Jerzy .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (12) :4344-4353

[4] a-InGaZnO thin-film transistors for AMOLEDs: Electrical stability and pixel-circuit simulation [J].

Chen, Charlene ;

Abe, Katsumi ;

Kumomi, Hideya ;

Kanicki, Jerzy .

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2009, 17 (06) :525-534

[5] Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors [J].

Chowdhury, Md Delwar Hossain ;

Migliorato, Piero ;

Jang, Jin .

APPLIED PHYSICS LETTERS, 2011, 98 (15)

[6]

Fung TC, 2009, J DISP TECHNOL, V5, P452, DOI [10.1109/JDT.2009.2020611, 10.1109/JDT.2009.2025521]

[7]

Gwang Um J., 2012, APPL PHYS LETT, V101

[8] Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors [J].

Hoshino, Ken ;

Hong, David ;

Chiang, Hai Q. ;

Wager, John F. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (07) :1365-1370

[9] Effect of Ag interlayer on the optical and passivation properties of flexible and transparent Al2O3/Ag/Al2O3 multilayer [J].

Jeong, Jin-A. ;

Kim, Han-Ki ;

Yi, Min-Su .

APPLIED PHYSICS LETTERS, 2008, 93 (03)

[10]

Lee J., 2009, APPL PHYS LETT, V95

← 1 2 →