MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

被引：37

作者：

Lemettinen, J. ^{[1
]}

Okumura, H. ^{[2
,3
]}

Kim, I. ^{[1
]}

Rudzinski, M. ^{[4
]}

Grzonka, J. ^{[4
]}

Palacios, T. ^{[3
]}

Suihkonen, S. ^{[1
]}

机构：

[1] Aalto Univ, Dept Elect & Nanoengn, POB 13500, FIN-00076 Aalto, Finland

[2] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[4] Inst Elect Mat Technol, Epitaxy Dept Z15, Wolczynska St 133, PL-01919 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2018年 / 487卷

基金：

芬兰科学院;

关键词：

Polarity; X-ray diffraction; Metal-organic vapor phase epitaxy; Nitrides; Semiconducting aluminum compounds; CHEMICAL-VAPOR-DEPOSITION; GAN FILMS; THREADING DISLOCATIONS; STRUCTURAL-PROPERTIES; SURFACE-MORPHOLOGY; PHASE EPITAXY; N-POLARITY; SAPPHIRE; FACE; LAYERS;

D O I：

10.1016/j.jcrysgro.2018.02.020

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al-polar AlN on 4H-SiC with 4 degrees miscut using constant growth parameters. At a high temperature of 1165 degrees C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-mu m-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：50 / 56

页数：7

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