Thresholds of quasi-supercontinuum interband quantum dot lasers

被引：0

作者：

Tan, C. L. ^{[1
]}

Wang, Y. ^{[1
]}

Djie, H. S. ^{[1
]}

Ooi, B. S. ^{[1
]}

机构：

[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 14-15期

基金：

美国国家科学基金会;

关键词：

Semiconductor laser; Superscontinuum; Broadband; Quantum-dot; Inhomogeneous broadening;

D O I：

10.1007/s11082-009-9277-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (Delta E) is comparable to the inhomogeneous broadening of quantum dot nanostructures.

引用

页码：1227 / 1231

页数：5

共 14 条

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