The optical parameters of TiO2 antireflection coating prepared by atomic layer deposition method for photovoltaic application

被引:1
作者
Szindler, Marek [1 ]
Szindler, Magdalena M. [1 ]
机构
[1] Silesian Tech Univ, Fac Mech Engn, Dept Engn Mat & Biomat, 18A Konarskiego St, PL-44100 Gliwice, Poland
关键词
thin film; atomic layer deposition; titanium dioxide; THIN-FILMS; GROWTH;
D O I
10.37190/oa200412
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).
引用
收藏
页码:663 / 670
页数:8
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