Sulvanites: The Promise at the Nanoscale

被引：18

作者：

Prado-Rivera, Roberto ^{[1
]}

Chang, Chen-Yu ^{[1
]}

Liu, Mimi ^{[1
]}

Lai, Cheng-Yu ^{[1
]}

Radu, Daniela R. ^{[1
]}

机构：

[1] Florida Int Univ, Dept Mech & Mat Engn, Miami, FL 33199 USA

来源：

NANOMATERIALS | 2021年 / 11卷 / 03期

基金：

美国国家科学基金会;

关键词：

sulvanite; solid-state synthesis; solution-phase synthesis; electronic structure; optical bandgap; elastic properties; thermodynamic properties; OPTICAL-PROPERTIES; CRYSTAL-STRUCTURE; ELECTRONIC-STRUCTURE; CU3VS4; NANOCRYSTALS; CU(3)MCH(4) M; CU3MX4; M; TERNARY; SE; TA; NB;

D O I：

10.3390/nano11030823

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The class of ternary copper chalcogenides Cu3MX4 (M = V, Nb, Ta; X = S, Se, Te), also known as the sulvanite family, has attracted attention in the past decade as featuring promising materials for optoelectronic devices, including solar photovoltaics. Experimental and theoretical studies of these semiconductors have provided much insight into their properties, both in bulk and at the nanoscale. The recent realization of sulvanites at the nanoscale opens new avenues for the compounds toward printable electronics. This review is aimed at the consideration of synthesis methods, relevant properties and the recent developments of the most important sulvanites.

引用

页数：20

共 68 条

[1]

Ali M.A., 2014, J SCI RES, V6, P407, DOI [10.3329/jsr.v6i3.19191, DOI 10.3329/JSR.V6I3.19191]

[2] Single Crystal X-ray Structure of Cu3TaSe4 and a Comparative Study of Cu3MX4 (M = V, Nb, Ta; X = S, Se, Te) [J].