High Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector

被引：26

作者：

Huang, Jian ^{[1
,2
,3
]}

Xie, Zhiyang ^{[1
]}

Chen, Yaojiang ^{[1
]}

Bowers, John E. ^{[4
]}

Chen, Baile ^{[1
]}

机构：

[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2020年 / 56卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Uni-traveling carrier photodetectors; high speed photodetectors; mid-wavelength infrared photodetectors; InAs/GaSb type II superlattices;

D O I：

10.1109/JQE.2020.3003038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A mid-wave infrared (MWIR) frequency comb is expected to dramatically improve the precision and sensitivity of molecular spectroscopy. For high resolution applications, a high speed MWIR photodetector is one of the key components, however, commercially available high speed MWIR photodetectors only have sub-GHz bandwidth currently. In this paper, we demonstrate, for the first time to our knowledge, a high speed mid-wave infrared (MWIR) uni-traveling carrier photodetector based on InAs/GaSb type-II superlattice (T2SL) at room temperature. The device exhibits a cutoff wavelength of 5.6 mu m and a 3dB bandwidth of 6.58 GHz for a 20 mu m diameter device at 300 K. These promising results show that the device has potential to be utilized in high speed applications such as frequency comb spectroscopy, free space communication and others. The limitations on the high frequency performance of the photodetectors are also discussed.

引用

页数：7

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