Characterization of Si wafers by μ-PCD with surface electric field

被引：8

作者：

Ichimura, M ^{[1
]}

Hirano, M

Tada, A

Arai, E

Takamatsu, H

Sumie, S

机构：

[1] Nagoya Inst Technol, Ctr Cooperat Res, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

[3] Kobe Steel Ltd, Proc Technol Res Labs, Nishi Ku, Kobe, Hyogo 6512271, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 73卷 / 1-3期

关键词：

Si wafer; carrier lifetime; surface recombination; microwave reflectance photoconductivity decay; chemical treatment; surface Fermi level;

D O I：

10.1016/S0921-5107(99)00469-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carrier recombination lifetime in Si wafers was measured by the microwave reflectance photoconductivity decay method with a voltage applied between the wafer and an electrode placed just above the wafer. From the dependence of the lifetime on the voltage, the following conclusions were drawn: (1) the surface Fermi level is close to the valence band for the wafers stored in air for several years. (2) positive charge is induced and the surface Fermi level is shifted to near the conduction band by the dilute HF treatment, and the positive charge remains on the surface under air exposure for more than 1 month: (3) positive charge is also induced by the NH4OH + H2O2 + H2O (SCl) treatment, but its amount is significantly reduced by 1 week of air exposure. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：230 / 234

页数：5

共 10 条

[1] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J].