Electrical characterization of nonvolatile memory with SnO2 nano-particle in polyimide dielectric layer

被引：8
作者：
Lee, Dong Uk [1 ,2 ]
Han, Seung Joung [1 ,2 ]
Seo, Ki Bong [1 ,2 ]
Kim, Eun Kyu [1 ,2 ]
Shin, Jin-Wook [3 ]
Cho, Won-Ju [3 ]
Kim, Young-Ho [4 ]
机构：
[1] Hanyang Univ, Quantum Funct Spin Lab, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[3] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea
[4] Hanyang Univ, Div Engn & Mat Sci, Seoul 133791, South Korea
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 46卷 / 1-2期
关键词：
Nonvolatile memory; SnO2; Nano-particles; Polyimide; NFGM; FABRICATION;
D O I：
10.1016/j.spmi.2009.01.002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The NFGM devices with SnO2 nano-particles on the p-type (100) silion-on-insulator wafers were fabricated and we analyzed the electrical characteristics such as subthreshold, threshold voltage shift and retention properties. The self-assembled SnO2 nanoparticles were created by chemical reaction between the polymer layers and 5-nm-thick Sn films. The SnO2 nano-particles had spherical shape with an average diameter of 15 nm and the particle density was 2.4 x 10(11) cm(-2). The electrons were charged into SnO2 nano-particles through SiO2 tunneling layer from channel of NFGM by using Fowler-Nordheim tunneling method. The memory windows of the fabricated NFGM maintained at 0.5 V after 10(3) S. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：176 / 181
页数：6
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