Electrochemical deposition of iron sulfide thin films and heterojunction diodes with zinc oxide

被引：30

作者：

Kawai, Shoichi ^{[1
]}

Yamazaki, Ryuta ^{[2
]}

Sobue, Susumu ^{[1
]}

Okuno, Eiichi ^{[1
]}

Ichimura, Masaya ^{[2
]}

机构：

[1] DENSO CORP Res Labs, Nisshin, Aichi 4700111, Japan

[2] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Nagoya, Aichi 4668555, Japan

来源：

APL MATERIALS | 2014年 / 2卷 / 03期

关键词：

CHEMICAL-VAPOR-DEPOSITION; PYRITE FES2; GROWTH; MOCVD;

D O I：

10.1063/1.4869035

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Iron sulfide thin films were fabricated by the electrochemical deposition method from an aqueous solution containing FeSO4 and Na2S2O3. The composition ratio obtained was Fe:S:O = 36:56:8. In the photoelectrochemical measurement, a weak negative photo-current was observed for the iron sulfide films, which indicates that its conduction type is p-type. No peaks were observed in X-ray diffraction pattern, and thus the deposited films were considered to be amorphous. For a hetero junction with ZnO, rectification properties were confirmed in the current-voltage characteristics. Moreover, the current was clearly enhanced under AM1.5 illumination. (C) 2014 Author(s).

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页数：5

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