Thermal oxidation and facet-formation mechanisms of Si nanowires

被引：1

作者：

Kioseoglou, J. ^{[1
]}

Komninou, Ph. ^{[1
]}

Zervos, M. ^{[2
,3
]}

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, NMMG, Thessaloniki 54124, Greece

[2] Univ Cyprus, Nanotechnol Res Ctr, Nanostruct Mat & Devices Lab, CY-1678 Nicosia, Cyprus

[3] Univ Cyprus, Dept Mech Engn, CY-1678 Nicosia, Cyprus

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2014年 / 8卷 / 04期

关键词：

silicon; nanowires; oxidation; facets; SILICON NANOWIRES; GROWTH;

D O I：

10.1002/pssr.201308280

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nanowires were grown along the [111] direction on Si(001) by the vapor-liquid-solid mechanism using 1 nm Au as a catalyst. They were subsequently oxidized at 900 degrees C for 60 min, 120 min and 180 min, which lead to the formation of a circular shell of amorphous SiO2 surrounding the Si core defined by primary (202), (220) (022) and secondary (422) crystal facets that form a polygon with nine sides having a lower symmetry compared to the hexagonal shape of the Si nanowires before oxidation. We explain the facet-formation mechanism by the oxidation of alternate vertices of the original hexagon, which leads to the appearance of higher index crystallographic planes tangential to a circle corresponding to the energetically favorable core geometry. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：307 / 311

页数：5

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