共 35 条
Preferential stability of the d-BCT phase in ZnO thin films
被引:41
作者:
Morgan, Benjamin J.
[1
]
机构:
[1] Univ Dublin Trinity Coll, Sch Chem, Dublin 2, Ireland
来源:
PHYSICAL REVIEW B
|
2009年
/
80卷
/
17期
基金:
爱尔兰科学基金会;
关键词:
II-VI semiconductors;
polymorphism;
semiconductor thin films;
solid-state phase transformations;
stoichiometry;
surface energy;
vibrational modes;
wide band gap semiconductors;
zinc compounds;
ZINC-OXIDE;
STRUCTURAL TRANSFORMATION;
INVERSION DOMAIN;
HIGH-PRESSURE;
NANOCRYSTALS;
SIMULATION;
NANOPARTICLES;
TRANSITION;
BOUNDARIES;
CHEMISTRY;
D O I:
10.1103/PhysRevB.80.174105
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Stoichiometric B4 thin films have formally divergent surface energies, which arise from the intrinsic dipole of the unit cell. Previous density functional theory studies have predicted that below a critical thickness this results in relaxation to the nonpolar planar h-MgO structure. The calculations presented here demonstrate that h-MgO-structured ZnO thin films are themselves unstable with respect to further relaxation to the d-BCT structure, which restores near-tetrahedral local coordination while minimizing the surface dipole. Although the B4 -> h-MgO relaxation is disfavored for slabs thicker than 20 layers, d-BCT is predicted to be the favored polymorph for slabs up to 54 layers. Nudged elastic band calculations and vibrational analysis indicate that the h-MgO -> d-BCT relaxation is spontaneous at nonzero temperatures.
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页数:5
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