Time dependence of different contributions for the photovoltaic effect in ferroelectric PZT thin films with asymmetric electrodes

被引:3
|
作者
Goncalves, Andre Marino [1 ]
Eiras, Jose Antonio [1 ]
机构
[1] Univ Fed Sao Carlos, Dept Phys, Ferro Mat Grp, BR-13565905 Sao Carlos, SP, Brazil
关键词
Photovoltaic devices; ferroelectric thin films; domain structure; functional interfaces; SELF-POLARIZATION; PHOTOCURRENT; RELAXATION;
D O I
10.1080/00150193.2019.1621707
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work the photovoltaic response of ferroelectric Pb(Zr0.20Ti0.80)O-3 (PZT) thin films, with asymmetric Metal/Ferroelectric/Metal structure (Au/PZT/ITO), was investigated and its effect correlated to the ferroelectric and interface properties. We found two effects governing the photovoltaic response in these thin films, a depolarization electric-field (E-dep), dependent on the direction and magnitude of the polarization, and an internal built-in electric field (E-bi) which could be generated by the different electrodes and processing conditions. The time dependence of the photocurrent showed a strong reduction of the photocurrent after poling, probably related to a reaccommodation of charges and back-switching of the polarization, due to the rearrangement of the domain structure in the material.
引用
收藏
页码:22 / 32
页数:11
相关论文
共 50 条
  • [21] Structural and ferroelectric characterization of PZT thin films
    Yang, Y
    Chen, ZM
    Zhao, GY
    Zhang, WH
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (28-29): : 4460 - 4464
  • [22] Preparation of ferroelectric PZT thin films by pulsed laser deposition and the dependence of substrate temperature
    Luo, Hao
    Zheng, Xue-Jun
    Zhou, Yi-Chun
    Zhongguo Jiguang/Chinese Journal of Lasers, 2001, 28 (06): : 570 - 572
  • [23] Thickness Dependence of Photovoltaic Effect in BiFeO3 Thin Films Based on Asymmetric Structures
    Rongli Gao
    Chunling Fu
    Wei Cai
    Gang Chen
    Xiaoling Deng
    Xianlong Cao
    Journal of Electronic Materials, 2017, 46 : 2373 - 2378
  • [24] Thickness Dependence of Photovoltaic Effect in BiFeO3 Thin Films Based on Asymmetric Structures
    Gao, Rongli
    Fu, Chunling
    Cai, Wei
    Chen, Gang
    Deng, Xiaoling
    Cao, Xianlong
    JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (04) : 2373 - 2378
  • [25] Comparison of the effect of PLT and PZT buffer layers on PZT thin films for ferroelectric materials applications
    Li, Dong Hua
    Lee, Eun Sun
    Chung, Hyun Woo
    Lee, Sang Yeol
    APPLIED SURFACE SCIENCE, 2006, 252 (13) : 4541 - 4544
  • [26] The shifting of P-E hysteresis loop by the asymmetric contacts on ferroelectric PZT thin films
    Lee, JJ
    Desu, SB
    FERROELECTRICS LETTERS SECTION, 1995, 20 (1-2) : 27 - 34
  • [27] Shifting of P-E hysteresis loop by the asymmetric contacts on ferroelectric PZT thin films
    Virginia Polytechnic Inst and State, Univ, Blacksburg, United States
    Ferroelectr Lett Sect, 1-2 (27-34):
  • [28] Exact and variational treatment of ferroelectric thin films with different materials of electrodes
    Stephanovich, VA
    Glinchuk, MD
    Zaulychnyz, VY
    FERROELECTRICS, 2005, 317 : 293 - 299
  • [29] Effects of different metal electrodes on the ferroelectric properties of HZO thin films
    Pei Xu
    Shaoan Yan
    Yingfang Zhu
    Junyi Zang
    Penghong Luo
    Gang Li
    Qiong Yang
    Zhuojun Chen
    Wanli Zhang
    Xuejun Zheng
    Minghua Tang
    Journal of Materials Science: Materials in Electronics, 2023, 34
  • [30] Effects of different metal electrodes on the ferroelectric properties of HZO thin films
    Xu, Pei
    Yan, Shaoan
    Zhu, Yingfang
    Zang, Junyi
    Luo, Penghong
    Li, Gang
    Yang, Qiong
    Chen, Zhuojun
    Zhang, Wanli
    Zheng, Xuejun
    Tang, Minghua
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (28)