Time dependence of different contributions for the photovoltaic effect in ferroelectric PZT thin films with asymmetric electrodes

被引:3
|
作者
Goncalves, Andre Marino [1 ]
Eiras, Jose Antonio [1 ]
机构
[1] Univ Fed Sao Carlos, Dept Phys, Ferro Mat Grp, BR-13565905 Sao Carlos, SP, Brazil
关键词
Photovoltaic devices; ferroelectric thin films; domain structure; functional interfaces; SELF-POLARIZATION; PHOTOCURRENT; RELAXATION;
D O I
10.1080/00150193.2019.1621707
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work the photovoltaic response of ferroelectric Pb(Zr0.20Ti0.80)O-3 (PZT) thin films, with asymmetric Metal/Ferroelectric/Metal structure (Au/PZT/ITO), was investigated and its effect correlated to the ferroelectric and interface properties. We found two effects governing the photovoltaic response in these thin films, a depolarization electric-field (E-dep), dependent on the direction and magnitude of the polarization, and an internal built-in electric field (E-bi) which could be generated by the different electrodes and processing conditions. The time dependence of the photocurrent showed a strong reduction of the photocurrent after poling, probably related to a reaccommodation of charges and back-switching of the polarization, due to the rearrangement of the domain structure in the material.
引用
收藏
页码:22 / 32
页数:11
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