A wideband noise-canceling CMOS LNA exploiting a transformer

被引:17
作者
Blaakmeer, Stephan C. [1 ]
Klumperink, Eric A. M. [1 ]
Leenaerts, Domine M. W. [2 ]
Nauta, Bram [1 ]
机构
[1] Univ Twente, IC Design Grp, Enschede, Netherlands
[2] Philips Res Labs, Eindhoven, Netherlands
来源
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2006年
关键词
CMOSFET amplifiers; broadband amplifiers; Low Noise Amplifier; LNA; transformers; autotransformers;
D O I
10.1109/RFIC.2006.1651110
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A broadband LNA incorporating single-ended to differential conversion, has been successfully implemented using a noise-canceling technique and a single on-chip transformer. The LNA achieves a high voltage gain of 19dB, a wideband input match (2.5-4.0 GHz), and a Noise Figure of 4-5.4 dB, while consuming only 8mNV. The LNA is implemented in a 90nm CMOS process with 6 metal layers.
引用
收藏
页码:137 / 140
页数:4
相关论文
共 6 条
[1]   An ultra-wideband CMOS LNA for 3.1 to 10.6GHz wireless receivers [J].
Bevilacqua, A ;
Niknejad, AM .
2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 :382-383
[2]   Wide-band CMOS low-noise amplifier exploiting thermal noise canceling [J].
Bruccoleri, F ;
Klumperink, EAM ;
Nauta, B .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (02) :275-282
[3]  
Chehrazi S, 2005, IEEE CUST INTEGR CIR, P801
[4]   An ultra-wideband CMOS low noise-amplifier for 3-5-GHz UWB system [J].
Kim, CW ;
Kang, MS ;
Anh, PT ;
Kim, HT ;
Lee, SG .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (02) :544-547
[5]  
Liu RC, 2003, IEEE RAD FREQ INTEGR, P103, DOI 10.1109/RFIC.2003.1213903
[6]   Monolithic transformers for silicon RF IC design [J].
Long, JR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (09) :1368-1382