Rare-earth-doped SiO2 films prepared by plasma-enhanced chemical vapour deposition

被引：17

作者：

Yoshihara, M

Sekiya, A

Morita, T

Ishii, K

Shimoto, S

Sakai, S

Ohki, Y

机构：

[1] Dept. Elec., Electronics Comp. Eng., Waseda University, Shinjuku-ku, Tokyo 169

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1997年 / 30卷 / 13期

关键词：

D O I：

10.1088/0022-3727/30/13/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rare-earth-doped thin SiO2 films were made by plasma-enhanced chemical vapour deposition using a complex containing chelating ligands and tetraethoxysilane. By this means of deposition, the film was successfully doped with terbium or erbium and the luminescence properties were investigated. In the case of Tb3+-doped films, strong luminescence peaks from the D-5(4) level were observed during excitation by a KrF excimer laser. Upon thermal treatment at 800 or 900 degrees C, luminescence peaks from the D-5(3) level appear. Under DC voltages, electroluminescence from the D-5(4) level was also observed.

引用

页码：1908 / 1912

页数：5

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