Rare-earth-doped SiO2 films prepared by plasma-enhanced chemical vapour deposition

被引：17
|
作者：
Yoshihara, M
Sekiya, A
Morita, T
Ishii, K
Shimoto, S
Sakai, S
Ohki, Y
机构：
[1] Dept. Elec., Electronics Comp. Eng., Waseda University, Shinjuku-ku, Tokyo 169
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1997年 / 30卷 / 13期
关键词：
D O I：
10.1088/0022-3727/30/13/012
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Rare-earth-doped thin SiO2 films were made by plasma-enhanced chemical vapour deposition using a complex containing chelating ligands and tetraethoxysilane. By this means of deposition, the film was successfully doped with terbium or erbium and the luminescence properties were investigated. In the case of Tb3+-doped films, strong luminescence peaks from the D-5(4) level were observed during excitation by a KrF excimer laser. Upon thermal treatment at 800 or 900 degrees C, luminescence peaks from the D-5(3) level appear. Under DC voltages, electroluminescence from the D-5(4) level was also observed.
引用
收藏
页码：1908 / 1912
页数：5
相关论文
共 50 条
  • [1] Structural properties of SiO2 films prepared by plasma-enhanced chemical vapor deposition
    Iacona, F
    Ceriola, G
    La Via, F
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (1-3) : 43 - 46
  • [2] Growth mechanisms of SiO2 thin films prepared by plasma enhanced chemical vapour deposition
    Yanguas-Gil, A
    Cotrino, J
    Yubero, F
    González-Elipe, AR
    SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4): : 881 - 885
  • [3] Porous SiO2 films prepared by remote plasma-enhanced chemical vapour deposition -: a novel antireflection coating technology for photovoltaic modules
    Nagel, H
    Metz, A
    Hezel, R
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 65 (1-4) : 71 - 77
  • [4] Deposition of silver films by plasma-enhanced chemical vapour deposition
    Oehr, C., 1600, (49):
  • [5] Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition
    Kato, H
    Sakai, S
    Takami, A
    Ohki, Y
    Ishii, K
    PROCEEDINGS OF THE 1998 IEEE INTERNATIONAL CONFERENCE ON CONDUCTION AND BREAKDOWN IN SOLID DIELECTRICS - ICSD '98, 1998, : 368 - 371
  • [6] Characterization of SiO2 thin films prepared by plasma-activated chemical vapour deposition
    Pfuch, A.
    Heft, A.
    Weidl, R.
    Lang, K.
    SURFACE & COATINGS TECHNOLOGY, 2006, 201 (1-2): : 189 - 196
  • [7] Silicon nitride films prepared by helicon wave plasma-enhanced chemical vapour deposition
    Yu, W
    Liu, LH
    Hou, HH
    Ding, XC
    Han, L
    Fu, GS
    ACTA PHYSICA SINICA, 2003, 52 (03) : 687 - 691
  • [8] Thermal stability and breakdown strength of carbon-doped SiO2:F films prepared by plasma-enhanced chemical vapor deposition method
    Lubguban, J
    Kurata, Y
    Inokuma, T
    Hasegawa, S
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (08) : 3715 - 3722
  • [9] DEPOSITION OF SIO2 THIN-FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
    TSU, DV
    LUCOVSKY, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C135 - C135
  • [10] Water absorption properties of fluorine-doped SiO2 films using plasma-enhanced chemical vapor deposition
    Miyajima, H
    Katsumata, R
    Nakasaki, Y
    Nishiyama, Y
    Hayasaka, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12A): : 6217 - 6225
12345