MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source-Drain Bulk Region

被引：45

作者：

Jeong, Jaewook ^{[1
]}

Hong, Yongtaek ^{[1
]}

Jeong, Jae Kyeong ^{[2
]}

Park, Jin-Seong ^{[3
]}

Mo, Yeon-Gon ^{[4
]}

机构：

[1] Seoul Natl Univ, Dept Elect Engn & Comp Sci, Seoul 151744, South Korea

[2] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea

[3] Dankook Univ, Dept Mat Sci & Engn, Cheonan, Chungnam, South Korea

[4] Samsung Mobile Display, R&D Ctr, Gyeonggi Do 446577, South Korea

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2009年 / 5卷 / 12期

关键词：

a-IGZO; a-InGaZnO; thin-film transistor (TFT); parasitic resistance; plasma exposure; ATLAS simulation; TCAD simulation; CARRIER TRANSPORT; CHANNEL-LENGTH; RESISTANCE;

D O I：

10.1109/JDT.2009.2021490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we analyzed electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with plasma-exposed source-drain (S/D) bulk region. The parasitic resistance and effective channel length characteristics exhibit similar behavior with that of crystalline silicon metal oxide-semiconductor field effect transistor (c-Si MOSFET) that has doped S/D bulk region. The transfer curves little changed with gate overlap variation, and the width-normalized parasitic resistance obtained from transmission line method was as low as 3 to 6 Omega. The effective channel length was shorter than the mask channel length and showed gate-to-source (V-GS) voltage dependency that is frequently observed for lightly doped drain (LDD) MOSFET. Experimental and simulation results showed that the plasma exposure caused an LDD-like doping effect in the S/D bulk region by inducing oxygen vacancy in the a-IGZO layer.

引用

页码：495 / 500

页数：6

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