MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source-Drain Bulk Region

被引：44

作者：

Jeong, Jaewook ^{[1
]}

Hong, Yongtaek ^{[1
]}

Jeong, Jae Kyeong ^{[2
]}

Park, Jin-Seong ^{[3
]}

Mo, Yeon-Gon ^{[4
]}

机构：

[1] Seoul Natl Univ, Dept Elect Engn & Comp Sci, Seoul 151744, South Korea

[2] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea

[3] Dankook Univ, Dept Mat Sci & Engn, Cheonan, Chungnam, South Korea

[4] Samsung Mobile Display, R&D Ctr, Gyeonggi Do 446577, South Korea

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2009年 / 5卷 / 12期

关键词：

a-IGZO; a-InGaZnO; thin-film transistor (TFT); parasitic resistance; plasma exposure; ATLAS simulation; TCAD simulation; CARRIER TRANSPORT; CHANNEL-LENGTH; RESISTANCE;

D O I：

10.1109/JDT.2009.2021490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we analyzed electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with plasma-exposed source-drain (S/D) bulk region. The parasitic resistance and effective channel length characteristics exhibit similar behavior with that of crystalline silicon metal oxide-semiconductor field effect transistor (c-Si MOSFET) that has doped S/D bulk region. The transfer curves little changed with gate overlap variation, and the width-normalized parasitic resistance obtained from transmission line method was as low as 3 to 6 Omega. The effective channel length was shorter than the mask channel length and showed gate-to-source (V-GS) voltage dependency that is frequently observed for lightly doped drain (LDD) MOSFET. Experimental and simulation results showed that the plasma exposure caused an LDD-like doping effect in the S/D bulk region by inducing oxygen vacancy in the a-IGZO layer.

引用

页码：495 / 500

页数：6

共 23 条

[1] AHN BD, 2008, AM FPD 08 TOK JAP, P299
[2] ATLAS User's manual, 2008, ATL US MAN
[3] Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors
Du Ahn, Byung
Shin, Hyun Soo
Kim, Hyun Jae
Park, Jin-Seong
Jeong, Jae Kyeong
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (20)
[4] Highly stable amorphous-silicon thin-film transistors on clear plastic
Hekmatshoar, Bahman
Cherenack, Kunigunde H.
Kattamis, Alex Z.
Long, Ke
Wagner, Sigurd
Sturm, James C.
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (03)
[5] Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
Hosono, Hideo
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 851 - 858
[6] Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states
Hsieh, Hsing-Hung
Kamiya, Toshio
Nomura, Kenji
Hosono, Hideo
Wu, Chung-Chih
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (13)
[7] GATE-VOLTAGE-DEPENDENT EFFECTIVE CHANNEL LENGTH AND SERIES RESISTANCE OF LDD MOSFETS
HU, GJ
CHANG, C
CHIA, YT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) : 2469 - 2475
[8] Modelling and numerical analysis for wavy edge in printed source and drain electrodes of thin-film transistors
Jeong, J.
Hong, Y.
Baek, S. H.
Tutt, L.
Burburry, M.
[J]. ELECTRONICS LETTERS, 2008, 44 (10) : 616 - 617
[9] Comprehensive study on the transport mechanism of amorphous indium-gallium-zinc oxide transistors
Jeong, Jae Kyeong
Chung, Hyun-Joong
Mo, Yeon-Gon
Kim, Hye Dong
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (11) : H873 - H877
[10] PERFORMANCE OF THIN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS
KANICKI, J
LIBSCH, FR
GRIFFITH, J
POLASTRE, R
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2339 - 2345

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