Effect of sulfurization time on the performance of monoclinic Cu2SnS3 solar cells

被引：22
作者：
Pallavolu, Mohan Reddy [1 ]
Kim, Chang-Duk [2 ]
Reddy, Vasudeva Reddy Minnam [1 ]
Gedi, Sreedevi [1 ]
Park, Chinho [1 ]
机构：
[1] Yeungnam Univ, Sch Chem Engn, Gyongsan 38541, South Korea
[2] Kyungpook Natl Univ, Dept Phys, 80 Daehakro, Daegu 41566, South Korea
来源：
SOLAR ENERGY | 2019年 / 188卷
关键词：
Monoclinic Cu2SnS3; Thin films; Sulfurization time; Optical properties; Electrical properties; Solar cells; THIN-FILM; METALLIC PRECURSORS; PHOTOVOLTAIC PROPERTIES; LOW-COST; TEMPERATURE; IMPACT; FABRICATION; EFFICIENCY; GROWTH; DEPOSITION;
D O I：
10.1016/j.solener.2019.06.004
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this study, monoclinic (M)-Cu2SnS3 (CTS) thin films were prepared by high vacuum (10 Pa) rapid thermal sulfurization of sputtered Cu/Sn/Cu metallic layers. The effect of sulfurization time (1 min, 5 min, 10 min, and 20 min) on the crystal structure, morphology, optical studies, and electrical studies of the M-CTS thin films was investigated. The structural studies assessed the formation of M-CTS single phase for the films sulfurized >= 10 min and the secondary phases in addition to M-CTS at shorter sulfurization durations of <= 5 min. The single phase M-CTS films sulfurized at 10 min showed dense morphology and had a band gap energy of 0.92 eV. The present results indicated that the short sulfurization time of 10 min is sufficient for the formation of single phase M-CTS thin films. The fabricated M-CTS solar cell showed a PCE of 0.51% for the films sulfurized at 10 min.
引用
收藏
页码：209 / 217
页数：9
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