Effect of sulfurization time on the performance of monoclinic Cu2SnS3 solar cells

被引：21

作者：

Pallavolu, Mohan Reddy ^{[1
]}

Kim, Chang-Duk ^{[2
]}

Reddy, Vasudeva Reddy Minnam ^{[1
]}

Gedi, Sreedevi ^{[1
]}

Park, Chinho ^{[1
]}

机构：

[1] Yeungnam Univ, Sch Chem Engn, Gyongsan 38541, South Korea

[2] Kyungpook Natl Univ, Dept Phys, 80 Daehakro, Daegu 41566, South Korea

来源：

SOLAR ENERGY | 2019年 / 188卷

关键词：

Monoclinic Cu2SnS3; Thin films; Sulfurization time; Optical properties; Electrical properties; Solar cells; THIN-FILM; METALLIC PRECURSORS; PHOTOVOLTAIC PROPERTIES; LOW-COST; TEMPERATURE; IMPACT; FABRICATION; EFFICIENCY; GROWTH; DEPOSITION;

D O I：

10.1016/j.solener.2019.06.004

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this study, monoclinic (M)-Cu2SnS3 (CTS) thin films were prepared by high vacuum (10 Pa) rapid thermal sulfurization of sputtered Cu/Sn/Cu metallic layers. The effect of sulfurization time (1 min, 5 min, 10 min, and 20 min) on the crystal structure, morphology, optical studies, and electrical studies of the M-CTS thin films was investigated. The structural studies assessed the formation of M-CTS single phase for the films sulfurized >= 10 min and the secondary phases in addition to M-CTS at shorter sulfurization durations of <= 5 min. The single phase M-CTS films sulfurized at 10 min showed dense morphology and had a band gap energy of 0.92 eV. The present results indicated that the short sulfurization time of 10 min is sufficient for the formation of single phase M-CTS thin films. The fabricated M-CTS solar cell showed a PCE of 0.51% for the films sulfurized at 10 min.

引用

页码：209 / 217

页数：9

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