Enhanced Electron Emission of Carbon-Nanotube Emitters with Post-Growth Treatment

被引：0

作者：

Lim, Joon Won ^{[1
]}

Ryu, Je Hwang ^{[1
]}

Lim, Han Eol ^{[1
]}

Son, Byoung Taek ^{[1
]}

Jang, Soon Ju ^{[1
]}

Lee, Yi Sang ^{[1
]}

Jang, Jin ^{[1
]}

Park, Kyu Chang ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Informat, Display & Adv Display Res Ctr, Seoul 130701, South Korea

来源：

2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - III | 2009年

关键词：

FIELD-EMISSION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We used a resist-assisted patterning (RAP) process for the growth of CNTs as electron emitters. The electron emission sites were easily controlled by simple resist patterning process. To obtain stabilized and enhanced electron emission, post growth treatment process was adopted. The electron emission current strongly depended on the post growth treatment conditions. The electron emission current was increased with increasing acid treatment time up to 20 second. The enhanced electron emission current was more enhanced with consecutive post growth temperature and acid treatment. After 20 sec post growth treatment on robust CNTs, we can obtain 1.62 mA/cm(2) current density at 4 V/mu m field. The controlled electron emission current of CAT emitter array with RAP process and structural improvement of CNT-FEAs after HF treatment for enhanced electron emission was discussed.

引用

页码：131 / 134

页数：4

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