PREPARATION AND CHARACTERIZATION OF THIN FILM SnSe USED BY CLOSE SPACED VAPOR TRANSPORT TECHNIQUE

In the present manuscript we have studied the preparation and characterization of SnSe thin film grown by close-spaced vapor transport (CSVT) technique. The thickness of similar to 10 mu m film was prepared in a temperature 600 degrees C with the deposition time 5 minutes on the SnO2 coated soda lime glass substrate. The film was charcterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis by X-rays (EDAX), UV-vis-NIR spectrophotometer and Hall effect measurement. In this paper we present results concerning the film showed the single phase orthorhombic structure, and the orientation to the (111) plane. From SEM image the grain sizes the film was found to be 2-4 mu m. SnSe film had a optical band gap of 0.92 eV with a hole concentration in the film is 4.7 x 10(18) cm(-3) and a p-type conduction.