On a GaN-Based Light-Emitting Diode With a p-GaN/i-InGaN Superlattice Structure

被引：21

作者：

Liu, Yi-Jung ^{[1
]}

Yen, Chih-Hung ^{[1
]}

Chen, Li-Yang ^{[1
]}

Tsai, Tsung-Han ^{[1
]}

Tsai, Tsung-Yuan ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 11期

关键词：

Current spreading; electrostatic discharge (ESD); GaN; hole confinement; superlattice (SL); INJECTION; LAYERS;

D O I：

10.1109/LED.2009.2030140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An interesting GaN-based light-emitting diode (LED) with a ten-period i-InGaN/p-GaN (5-nm/5-nm) superlattice (SL) structure, inserted between a multiple-quantum-well structure and a p-GaN layer, is fabricated and studied. This inserted SL can be regarded as a confinement layer of holes to enhance the hole injection efficiency. As compared with a conventional LED device without the SL structure, the studied LED exhibits better current-spreading performance and an improved quality. The turn-on voltage, at 20 mA, is decreased from 3.32 to 3.14 V due to the reduced contact resistance as well as the more uniformity of carrier injection. A substantially reduced leakage current (10(-7) - 10(-9) A) and higher endurance of the reverse current pulse are found. As compared with the conventional LED without the SL structure, the significant enhancement of 25.4% in output power and the increment of 5% in external quantum efficiency are observed.

引用

页码：1149 / 1151

页数：3

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