Electric field and concentration effects on the binding energy of a non-hydrogenic donor impurity in a finite cylindrical quantum well wire

被引：0

作者：

Dalgic, S. ^{[1
]}

Ozkapi, B. ^{[1
]}

机构：

[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 12期

关键词：

Quantum well wire; donor impurity; electric field and concentration effects; CROSS-SECTION; HYDROGENIC IMPURITIES; SELF-POLARIZATION; SHALLOW DONORS; STATES; POLARIZABILITY; DEPENDENCE; DENSITY;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of the electric field and concentration on the non-hydrogenic binding energy of a shallow donor impurity in a finite cylindrical quantum well wire (CQWW) of GaAs/ AlxGa1-xAs was investigated. Within the effective mass approximation, we have calculated the non-hydrogenic binding energy of donor impurity by a variational method as a function of applied electric field, the wire radius, donor impurity positions and concentration of Al. We have investigated the concentration effect of Al on the non-hydrogenic binding energy as a function of electric field, wire radius and impurity position in QWW. It is shown that the difference in donor binding energy in the hydrogenic and non-hydrogenic regimes varies with radius of QWWs and impurity position while the interplay of the electric field is the same.

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页码：2120 / 2125

页数：6

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