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Electric field and concentration effects on the binding energy of a non-hydrogenic donor impurity in a finite cylindrical quantum well wire
被引:0
作者:
Dalgic, S.
[1
]
Ozkapi, B.
[1
]
机构:
[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey
来源:
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
|
2009年
/
11卷
/
12期
关键词:
Quantum well wire;
donor impurity;
electric field and concentration effects;
CROSS-SECTION;
HYDROGENIC IMPURITIES;
SELF-POLARIZATION;
SHALLOW DONORS;
STATES;
POLARIZABILITY;
DEPENDENCE;
DENSITY;
D O I:
暂无
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The effects of the electric field and concentration on the non-hydrogenic binding energy of a shallow donor impurity in a finite cylindrical quantum well wire (CQWW) of GaAs/ AlxGa1-xAs was investigated. Within the effective mass approximation, we have calculated the non-hydrogenic binding energy of donor impurity by a variational method as a function of applied electric field, the wire radius, donor impurity positions and concentration of Al. We have investigated the concentration effect of Al on the non-hydrogenic binding energy as a function of electric field, wire radius and impurity position in QWW. It is shown that the difference in donor binding energy in the hydrogenic and non-hydrogenic regimes varies with radius of QWWs and impurity position while the interplay of the electric field is the same.
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页码:2120 / 2125
页数:6
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