Electric field and concentration effects on the binding energy of a non-hydrogenic donor impurity in a finite cylindrical quantum well wire

被引：0
作者：
Dalgic, S. [1 ]
Ozkapi, B. [1 ]
机构：
[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 12期
关键词：
Quantum well wire; donor impurity; electric field and concentration effects; CROSS-SECTION; HYDROGENIC IMPURITIES; SELF-POLARIZATION; SHALLOW DONORS; STATES; POLARIZABILITY; DEPENDENCE; DENSITY;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of the electric field and concentration on the non-hydrogenic binding energy of a shallow donor impurity in a finite cylindrical quantum well wire (CQWW) of GaAs/ AlxGa1-xAs was investigated. Within the effective mass approximation, we have calculated the non-hydrogenic binding energy of donor impurity by a variational method as a function of applied electric field, the wire radius, donor impurity positions and concentration of Al. We have investigated the concentration effect of Al on the non-hydrogenic binding energy as a function of electric field, wire radius and impurity position in QWW. It is shown that the difference in donor binding energy in the hydrogenic and non-hydrogenic regimes varies with radius of QWWs and impurity position while the interplay of the electric field is the same.
引用
收藏
页码：2120 / 2125
页数：6
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