Pt-sputtering-like NiCo2S4 counter electrode for efficient dye-sensitized solar cells

被引:41
作者
Huang, Niu [1 ]
Zhang, Shouzheng [1 ]
Huang, Hua [2 ]
Liu, Jingwen [1 ]
Sun, Yihua [1 ]
Sun, Panpan [1 ]
Bao, Chao [1 ]
Zheng, Linjie [1 ]
Sun, Xiaohua [1 ]
Zhao, Xingzhong [3 ]
机构
[1] China Three Gorges Univ, Coll Mat & Chem Engn, Hubei Prov Collaborat Innovat Ctr New Energy Micr, Collaborat Innovat Ctr Energy Equipment Gorges Re, Yichang 443002, Peoples R China
[2] Three Gorges Ctr Prod Qual Control, Yichang 443002, Peoples R China
[3] Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro Nano Struct Educ, Wuhan 430072, Peoples R China
关键词
dye-sensitized solar cells; counter electrode; interfacial adhesion; mechanical stability; electrocatalytic activity; IN-SITU GROWTH; ALLOY NANOPARTICLES; COMPOSITE FILMS; PLATINUM; MICROSPHERES; SULFIDE; ARRAYS; SUBSTRATE; CATALYST; CONI2S4;
D O I
10.1016/j.electacta.2016.02.004
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A facile method is developed to prepare NiCo2S4 counter electrode (CE) which is in-situ grown on SnO2:F transparent conductive glass (FTO) with mirror-like smooth surface. As demonstrated by analyses, the electrocatalytic activity, electrical conductivity and light reflectivity of the NiCo2S4 CE exceed or approach to those of Pt-sputtering CE, and are much better than those of Pt-pyrolysis CE. Thus the conversion efficiency (eta) of the dye sensitized solar cell (DSSC, 8.10%) based on NiCo2S4 CE is higher than the cell based on Pt-sputtering CE (7.60%), and is superior to the one based on Pt-pyrolysis CE (7.01%). Remarkably, NiCo2S4 CE also exhibits excellent chemical and mechanical stability. There are almost no changes on morphology and interfacial adhesion between NiCo2S4 film and FTO substrate after sequential 1000-time scans of cyclic voltammetry and 100 cycles of 3 M Scotch tape detachment. The eta of DSSC drops a little from 8.10% to 7.94%. The numerous superiorities of the Pt-sputtering-like NiCo2S4 CE permit its promising application in DSSCs. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:521 / 528
页数:8
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