Microstructure and Optical Characterization of Mid-Wave HgCdTe Grown by MBE under Different Conditions

被引：7

作者：

Qiu, Xiao-Fang ^{[1
,2
]}

Zhang, Sheng-Xi ^{[2
]}

Zhang, Jian ^{[2
]}

Zhu, Yi-Cheng ^{[2
]}

Dou, Cheng ^{[1
]}

Han, San-Can ^{[1
]}

Wu, Yan ^{[2
]}

Chen, Ping-Ping ^{[2
]}

机构：

[1] Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, Shanghai 200093, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

CRYSTALS | 2021年 / 11卷 / 03期

关键词：

HgCdTe; molecular beam epitaxy; optical properties; defects; interface; ALTERNATIVE SUBSTRATE; EPITAXIAL-GROWTH; LAYERS; GASB; PERFORMANCE;

D O I：

10.3390/cryst11030296

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by X-ray diffraction, scanning transmission electron microscopy, Raman and photoluminescence. The effects of growth temperature on the crystal quality of HgCdTe/CdTe have been studied in detail. The HgCdTe film grown at the lower temperature of 151 degrees C has high crystal quality, the interface is flat and there are no micro twins. While the crystal quality of the HgCdTe grown at higher temperature of 155 degrees C is poor, and there are defects and micro twins at the HgCdTe/CdTe interface. The research results demonstrate that the growth temperature significantly affects the crystal quality and optical properties of HgCdTe films.

引用

页数：9

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