Progress in the science and technology of direct conversion X-ray image detectors: The development of a double layer a-Se based detector

被引:0
作者
Kasap, S. O. [1 ]
Belev, G. [1 ]
机构
[1] Univ Saskatchewan, Dept Elect & Comp Engn, Saskatoon, SK S7N 5A9, Canada
来源
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2007年 / 9卷 / 01期
关键词
X-ray photoconductors; X-ray detectors; a-Se alloys; dark current; a-Se; HgI2; PbO; CdZnTe;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
One very important requirement for an X-ray photoconcluctor to be usable in a practical detector is that the dark current at the operating field should be as low as possible. We examine, in terms of an order of magnitude calculations, the maximum allowed dark current density, which is similar to 10 pA mm(-2). Dark currents in presently competing X-ray photoconductors are compared and discussed. We pay particular attention to a-Se based photoconcluctors inasmuch as the progress in the science and technology of a-Se based detectors has led to their commercialization. We report and discuss dark current measurements on single and double layer a-Se based photoconcluctor structures, and show how these measurements paved the way to the development of a new a-Se based X-ray detector fabricated on a CCD that is suitable for slot scanned X-ray imaging. The a-Se CCD detector has provided excellent images, and has a remarkable high resolution, better than 16 lines mm(-1).
引用
收藏
页码:1 / 10
页数:10
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