Interaction of Chromium Atoms with Dislocations and as-Grown Vacancy Complexes and its Impact on the Electronic Properties of FZ-Si

被引：0

作者：

Kveder, Vitaly ^{[1
]}

Khorosheva, Maria ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2019年 / 256卷 / 08期

关键词：

chromium; defects; dislocations; silicon; ELECTRICAL-PROPERTIES; PLATINUM DIFFUSION; METAL IMPURITIES; POINT-DEFECTS; SILICON; RECOMBINATION; CONTAMINATION; AGGREGATION; NITROGEN;

D O I：

10.1002/pssb.201900013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

By using deep level transient spectroscopy (DLTS) and light beam induced current (LBIC) the behavior of chromium atoms in float-zone n-Si in the presence of dislocations and as-grown vacancy complexes has been investigated. It was found that reactions of interstitial chromium atoms with dislocations and with as-grown nitrogen-vacancy complexes reduce significantly the nucleation barrier for the formation of chromium-silicide precipitates so that nearly all Cr atoms are collected into the precipitates even in quenched samples. These nano-precipitates are very active in electron-hole recombination and give a very broad DLTS signal related to deep donor electronic states in the bandgap of silicon.

引用

页数：7