A 30 GHz Low Power & High Gain Low Noise Amplifier with Gm-boosting in 28nm FD-SOI CMOS Technology

被引：0
|
作者：
Konidas, Georgios [1 ]
Gkoutis, Panagiotis [1 ]
Kolios, Vasilis [1 ]
Kalivas, Grigorios [1 ]
机构：
[1] Univ Patras, Appl Elect Lab, Dept Elect & Comp Engn, Patras, Greece
来源：
2019 8TH INTERNATIONAL CONFERENCE ON MODERN CIRCUITS AND SYSTEMS TECHNOLOGIES (MOCAST) | 2019年
关键词：
LNA; CMOS; G(m)-boosting; 30-GHz Band; 5G; Millimeter-Wave Integrated Circuit;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 30 GHz Low Noise Amplifier (LNA) in 28nm FD-SOI CMOS technology for 5G applications. The LNA consists of two stages. The first stage is a cascode topology with gm-boosting technique in order to achieve low Noise Figure (NF). The second stage consists of a differential amplifier for the purpose of achieving higher gain. The first and second stages are coupled, using a balun (balanced to unbalanced) transformer. The proposed LNA exhibits a gain of 24.1 dB and the minimum NF of 3.7 dB at 30 GHz. This specific LNA design consumes only 9.3 mW from a power supply of 1V
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页数：4
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