Novel ozone gas sensor based on ZnO nanostructures grown by the microwave-assisted hydrothermal route

被引:51
作者
Rocha, L. S. R. [1 ]
Foschini, C. R. [3 ]
Silva, C. C. [1 ]
Longo, E. [2 ]
Simoes, A. Z. [1 ]
机构
[1] Univ Estadual Paulista Unesp, Fac Engn Guaratingueta, Ave Dr Ariberto Pereira da Cunha 333, BR-12516410 Guaratingueta, SP, Brazil
[2] UNESP, Inst Quim, Dept Fis Quim, Lab Interdisciplinar Ceram LIEC, BR-14800900 Araraquara, SP, Brazil
[3] Univ Estadual Paulista, UNESP, Fac Engn Bauru, Dept Engn Mecan, Ave Engn Luiz Edmundo C Coube 14-01, BR-17033360 Bauru, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
Powders: chemical preparation; Defects; ZnO; Sensors; THIN-FILMS; IMPEDANCE SPECTROSCOPY; SENSING PROPERTIES; FABRICATION; NANORODS; NANOPARTICLES; SENSITIVITY; MORPHOLOGY; EMISSION;
D O I
10.1016/j.ceramint.2015.11.145
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Good quality ZnO nanostructures were obtained by the microwave-assisted hydrothermal synthesis, at low reaction temperatures, using zinc acetate as the starting precursor. X-ray diffraction confirmed the crystallinity of the ZnO nanostructures, which resulted free of impurities. Field emission gun scanning electron microscopy analysis revealed that the ZnO nanostructures crystallized at 120 degrees C were more homogeneous and had a constant diameter along the entire wire length, exhibiting an ideal defect density that favors the gas sensing response. A new ozone gas sensor based on these nanostructures was evaluated at low exposure times (15 s) by recording the change in the film resistance. The ZnO nanostructures showed good sensitivity even at low ozone concentration (100 ppb), and fast response and short recovery time at 200 degrees C, demonstrating great potential for a variety of applications. Two main effects were observed: the first one is intrinsic to that of the sample, while the second is a consequence of the surface and interface complex cluster defects, which produce extrinsic defects. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:4539 / 4545
页数:7
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