Tunable quantum interference in bilayer graphene in double-resonant Raman scattering

被引:4
作者
Herziger, Felix [1 ]
Tyborski, Christoph [1 ]
Ochedowski, Oliver [2 ,3 ]
Schleberger, Marika [2 ,3 ]
Maultzsch, Janina [1 ,4 ]
机构
[1] Tech Univ Berlin, Inst Festkorperphys, Hardenbergstr 36, D-10623 Berlin, Germany
[2] Univ Duisburg Essen, Fak Phys, D-47048 Duisburg, Germany
[3] Univ Duisburg Essen, CENIDE, D-47048 Duisburg, Germany
[4] Friedrich Alexander Univ Erlangen Nurnberg, Dept Phys, Staudtstr 7, D-91058 Erlangen, Germany
基金
欧洲研究理事会;
关键词
DEFECTS; SPECTROSCOPY; SPECTRA;
D O I
10.1016/j.carbon.2018.03.026
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The line shape of the double-resonant 2D Raman mode in bilayer graphene is often considered to be characteristic for a certain laser excitation energy. Here, in a joint experimental and theoretical study, we analyze the dependence of the double-resonant Raman scattering processes in bilayer graphene on the electronic broadening parameter gamma. We demonstrate that the ratio between symmetric and anti-symmetric scattering processes sensitively depends on the lifetime of the electronic states, explaining the experimentally observed variation of the complex 2D-mode line shape. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:254 / 259
页数:6
相关论文
共 44 条
[1]   Single ion induced surface nanostructures: a comparison between slow highly charged and swift heavy ions [J].
Aumayr, Friedrich ;
Facsko, Stefan ;
El-Said, Ayman S. ;
Trautmann, Christina ;
Schleberger, Marika .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (39)
[2]   Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene [J].
Basko, D. M. ;
Piscanec, S. ;
Ferrari, A. C. .
PHYSICAL REVIEW B, 2009, 80 (16)
[3]   Theory of resonant multiphonon Raman scattering in graphene [J].
Basko, D. M. .
PHYSICAL REVIEW B, 2008, 78 (12)
[4]   Intrinsic Line Shape of the Raman 2D-Mode in Freestanding Graphene Monolayers [J].
Berciaud, Stephane ;
Li, Xianglong ;
Htoon, Han ;
Brus, Louis E. ;
Doorn, Stephen K. ;
Heinz, Tony F. .
NANO LETTERS, 2013, 13 (08) :3517-3523
[5]   Doping Dependence of the Raman Spectrum of Defected Graphene [J].
Bruna, Matteo ;
Ott, Anna K. ;
Ijaes, Mari ;
Yoon, Duhee ;
Sassi, Ugo ;
Ferrari, Andrea C. .
ACS NANO, 2014, 8 (07) :7432-7441
[6]   Geometrical approach for the study of G′ band in the Raman spectrum of monolayer graphene, bilayer graphene, and bulk graphite [J].
Cancado, L. G. ;
Reina, A. ;
Kong, J. ;
Dresselhaus, M. S. .
PHYSICAL REVIEW B, 2008, 77 (24)
[7]   Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies [J].
Cancado, L. G. ;
Jorio, A. ;
Martins Ferreira, E. H. ;
Stavale, F. ;
Achete, C. A. ;
Capaz, R. B. ;
Moutinho, M. V. O. ;
Lombardo, A. ;
Kulmala, T. S. ;
Ferrari, A. C. .
NANO LETTERS, 2011, 11 (08) :3190-3196
[8]   Phonon renormalization in doped bilayer graphene [J].
Das, A. ;
Chakraborty, B. ;
Piscanec, S. ;
Pisana, S. ;
Sood, A. K. ;
Ferrari, A. C. .
PHYSICAL REVIEW B, 2009, 79 (15)
[9]   Raman study on defective graphene: Effect of the excitation energy, type, and amount of defects [J].
Eckmann, Axel ;
Felten, Alexandre ;
Verzhbitskiy, Ivan ;
Davey, Rebecca ;
Casiraghi, Cinzia .
PHYSICAL REVIEW B, 2013, 88 (03)
[10]   Probing the Nature of Defects in Graphene by Raman Spectroscopy [J].
Eckmann, Axel ;
Felten, Alexandre ;
Mishchenko, Artem ;
Britnell, Liam ;
Krupke, Ralph ;
Novoselov, Kostya S. ;
Casiraghi, Cinzia .
NANO LETTERS, 2012, 12 (08) :3925-3930