Strain-dependent electrical resistance of tin-doped indium oxide on polymer substrates

被引：534

作者：

Cairns, DR ^{[1
]}

Witte, RP

Sparacin, DK

Sachsman, SM

Paine, DC

Crawford, GP

Newton, RR

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

[2] TechniMet Inc, Windsor, CT 06095 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 11期

关键词：

D O I：

10.1063/1.126052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The increase in sheet resistance of indium-tin-oxide (ITO) films on polyethylene terephthalate with increasing tensile strain is reported. The increase in resistance is related to the number of cracks in the conducting layer which depends upon applied strain and film thickness. We propose a simple model that describes the finite but increasing resistance in the cracked ITO layer in terms of a small volume of conducting material within each crack. (C) 2000 American Institute of Physics. [S0003-6951(00)02710-8].

引用

页码：1425 / 1427

页数：3

共 11 条

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