Infrared spectroscopy of Pb layer growth on Si(111)

被引：27
作者：
Pucci, Annemarie
Kost, Florian
Fahsold, Gerhard
Jalochowski, Mieczyslaw
机构：
[1] Heidelberg Univ, Kirchhoff Inst Phys, D-69120 Heidelberg, Germany
[2] Marie Curie Sklodowska Univ, Inst Phys, PL-20031 Lublin, Poland
来源：
PHYSICAL REVIEW B | 2006年 / 74卷 / 12期
关键词：
QUANTUM-SIZE; OPTICAL-PROPERTIES; METALLIC-FILMS; ULTRATHIN PB; CONDUCTIVITY; RESISTIVITY; ELECTRONS; FE; NI; AU;
D O I：
10.1103/PhysRevB.74.125428
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The growth of Pb films on Si(111)-(6x6) Au and on Si(111)-(7x7) Au at 120 K was investigated in situ with infrared transmittance spectroscopy. In the development of the transmission spectra with film thickness the formation of the crystalline layer, the layer-by-layer growth mode, and size effects can be identified. The infrared spectra are analyzed with the Drude model for the dielectric function. In order to get a good fit, both the parameters' plasma frequency and relaxation rate must become thickness dependent, which is explained in relation to the quantum-size effects and to the classical-size effect. This work is the first infrared spectroscopic study of quantum-size effect-related oscillations in metal films.
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页数：6
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