Atomic force microscope cantilever array for parallel lithography of quantum devices

被引：13

作者：

Kakushima, K

Watanabe, T

Shimamoto, K

Gouda, T

Ataka, M

Mimura, H

Isono, Y

Hashiguchi, G

Mihara, Y

Fujita, H

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1528505, Japan

[2] Ritsumeikan Univ, Kusatsu, Shiga 5258577, Japan

[3] Kagawa Univ, Takamatsu, Kagawa 7610396, Japan

[4] Shizuoka Univ, Hamamatsu, Shizuoka 4328011, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 6B期

关键词：

atomic force microscope (AFM); scanning probe lithography (SPL); electric-field-enhanced oxidation; self-assembled monolayer (SAM); single-electron transistor (SET); KOH; local oxidation of silicon (LOCOS);

D O I：

10.1143/JJAP.43.4041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arrayed atomic force microscope (AFM) cantilevers for parallel scanning probe lithography (SPL) have been fabricated by silicon micromachining. Fabrication is based on three KOH etching steps and local oxidation processes. The curvature radius of the tips is as sharp as 20 nm. A laser beam focused onto the middle probe enables us to observe the wafer for alignment and confirm the patterns after the SPL operation. Parallel SPL on N-octadecyltrimethoxysilane (ODS) self-assembled monolayer (SAM) films is susessfully demonstrated with five probes. Good alignment and homogeneity are obtained with simple operation. Parallel SPL for parallel quantum device fabrications is also reported.

引用

收藏

页码：4041 / 4044

页数：4

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