Optical and structural characteristics of Ga-doped ZnO films

被引：39

作者：

Novodvorsky, O. A. ^{[1
]}

Gorbatenko, L. S. ^{[1
]}

Panchenko, V. Ya. ^{[1
]}

Khramova, O. D. ^{[1
]}

Cherebilo, Ye. A. ^{[1
]}

Wenzel, C. ^{[2
]}

Bartha, J. W. ^{[2
]}

Bublik, V. T. ^{[3
]}

Shcherbachev, K. D. ^{[3
]}

机构：

[1] Russian Acad Sci, Inst Laser & Informat Technol, Shatura 140700, Moscow Oblast, Russia

[2] Tech Univ Dresden, Inst Semicond & Microsyst Technol, D-01063 Dresden, Germany

[3] Technol Univ, Moscow State Inst Steel & Alloys, Moscow 119049, Russia

来源：

SEMICONDUCTORS | 2009年 / 43卷 / 04期

关键词：

LASER-DEPOSITION; THIN-FILMS; MGXZN1-XO; EMISSION;

D O I：

10.1134/S1063782609040034

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The n-ZnO films doped with Ga to the content 2.5 at % are produced by pulse laser deposition onto the (0001) oriented single crystal sapphire substrates. The transmittance spectra of the ZnO films in the range from 200 to 3200 nm are studied in relation to the Ga dopant content. It is established that an increase in the Ga content shifts the fundamental absorption edge to the blue region, but reduces the transparency of the ZnO films in the infrared spectral region. The dependence of the band gap on the level of doping with Ga is determined. The photoluminescence spectra of the ZnO films doped to different levels are recorded. It is established that the PL intensity and peak position vary unsteadily with the level of doping. X-ray diffraction studies of the structure of the films are carried out. It is found that the crystallographic parameters (the lattice constant c) of the ZnO film depend on the Ga dopant content and the conditions of deposition of the films.

引用

页码：419 / 424

页数：6

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