High-power Heterogeneously Integrated Waveguide-coupled Photodiodes on Silicon-on-Diamond

被引：0

作者：

Xie, Xiaojun ^{[1
]}

Liu, Naiming ^{[2
]}

Yang, Zhanyu ^{[1
]}

Ramaswamy, Anand ^{[3
]}

Shen, Yang ^{[1
]}

Jacob-Mitos, Matt ^{[3
]}

Norberg, Erik ^{[3
]}

Zhang, Jianzhong ^{[1
]}

Lichtenberger, Arthur W. ^{[1
]}

Floro, Jerrold A. ^{[2
]}

Fish, Greg ^{[3
]}

Campbell, Joe C. ^{[1
]}

Beling, Andreas ^{[1
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[2] Univ Virginia, Mat Sci & Engn, Charlottesville, VA 22904 USA

[3] Aurrion Inc, 130 Robin Hill Rd 300, Goleta, CA 93117 USA

来源：

2016 IEEE INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP) | 2016年

关键词：

Photodiode; Silicon photonics; microwave photonics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate InP-based high power modified uni-traveling carrier photodiodes heterogeneously integrated on silicon on diamond (SOD) waveguides. These photodiodes reach 20 nA dark current at -5 V bias voltage. A 50 mu m long device exhibits an internal responsivity of 1.07 A/W. The bandwidths of the devices with 14x25 mu m(2), 14x50 mu m(2), 14x100 mu m(2) and 14x150 mu m(2)- area are 22 GHz, 16 GHz, 10 GHz and 7 GHz, respectively. The maximum output RF powers of the 14x100 mu m(2)- photodiode are 15.3 dBm at 10 GHz and 19.8 dBm at 1 GHz. The maximum DC dissipated power at 1 GHz is 0.8 W. To our knowledge, this is the first demonstration of III-V photodiodes integrated into a SOD architecture.

引用

页码：229 / 232

页数：4

共 2 条

[1] Uni-traveling-carrier variable confinement waveguide photodiodes [J].

Klamkin, Jonathan ;

Madison, Shannon M. ;

Oakley, Douglas C. ;

Napoleone, Antonio ;

O'Donnell, Frederick J. ;

Sheehan, Michael ;

Missaggia, Leo J. ;

Caissie, Janice M. ;

Plant, Jason J. ;

Juodawlkis, Paul W. .

OPTICS EXPRESS, 2011, 19 (11) :10199-10205

[2]

Ramaswamy A., 2010, T MICROW THEORY TECH, V58, P3336

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