Coincident-site lattice matching during van der Waals epitaxy

被引：39

作者：

Boschker, Jos E. ^{[1
]}

Galves, Lauren A. ^{[1
]}

Flissikowski, Timur ^{[1
]}

Lopes, Joao Marcelo J. ^{[1
]}

Riechert, Henning ^{[1
]}

Calarco, Raffaella ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

SCIENTIFIC REPORTS | 2015年 / 5卷

关键词：

LAYER; SIC(0001); GRAPHENE;

D O I：

10.1038/srep18079

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Van der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb2Te3 films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6 root 3 x 6 root 3)R30 degrees buffer layer) are used to study the vdW epitaxy between two 2-dimensionally (2D) bonded materials. It is shown that the Sb2Te3/graphene interface is stable and that coincidence lattices are formed between the epilayers and substrate that depend on the size of the surface unit cell. This demonstrates that there is a significant, although relatively weak, interfacial interaction between the two materials. Lattice matching is thus relevant for vdW epitaxy with two 2D bonded materials and a fundamental design parameter for vdW heterostructures.

引用

页数：8

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