Energetic Nanoporous Silicon Devices

被引:60
作者
Currano, Luke J. [1 ]
Churaman, Wayne A. [1 ]
机构
[1] USA, Res Lab, Adelphi, MD 20783 USA
关键词
Explosive; nanoenergetic; nanoporous silicon; THERMAL-CONDUCTIVITY; POROUS SILICON; FILMS;
D O I
10.1109/JMEMS.2009.2023883
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nanoporous energetic silicon is a promising new material for on-chip integration of energetic materials. We demonstrate several advances in the integration of nanoporous energetic silicon, including monolithic integration of a hotwire initiator on nanoporous energetic silicon, with 2.8-V ignition. We also demonstrate lithographically patterned arrays of energetic devices that are independently addressable through integrated initiators with no sympathetic ignition. Monolithic integration of the energetic material with a surface micromachined microelectromechanical systems sensor is also shown. The performance and failure mechanisms of the hotwire initiator are examined, and preliminary measurements of the thrust and propagation velocity are reported.
引用
收藏
页码:799 / 807
页数:9
相关论文
共 20 条
[1]  
Canham Leigh., 1997, Properties of porous silicon
[2]   Thermal conductivities of evaporated gold films on silicon and glass [J].
Chen, G ;
Hui, P .
APPLIED PHYSICS LETTERS, 1999, 74 (20) :2942-2944
[3]  
CLEMENT D, 2004, P 35 INT C ICT
[4]  
CLEMENT D, 2005, PHYS STATUS SOLIDI A, V202, P1364
[5]   Nanoporous silicon explosive devices [J].
du Plessis, Monuko .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2008, 147 (2-3) :226-229
[6]   Integrated nanoporous silicon nano-explosive devices [J].
du Plessis, Monuko .
2007 IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS, PROCEEDINGS, VOLS 1-8, 2007, :1574-1579
[7]   Properties of porous silicon nano-explosive devices [J].
du Plessis, Monuko .
SENSORS AND ACTUATORS A-PHYSICAL, 2007, 135 (02) :666-674
[8]  
GROSMAN A, 1997, PROPERTIES POROUS SI, P145
[9]   Strong explosive interaction of hydrogenated porous silicon with oxygen at cryogenic temperatures -: art. no. 068301 [J].
Kovalev, D ;
Timoshenko, VY ;
Künzner, N ;
Gross, E ;
Koch, F .
PHYSICAL REVIEW LETTERS, 2001, 87 (06) :68301-1
[10]   Thermal conductivity of thin metallic films measured by photothermal profile analysis [J].
Langer, G ;
Hartmann, J ;
Reichling, M .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1997, 68 (03) :1510-1513