Fabrication of a non-enzymatic glucose sensor field-effect transistor based on vertically-oriented ZnO nanorods modified with Fe2O3

被引:92
作者
Ahmad, Rafiq [1 ]
Ahn, Min-Sang [1 ]
Hahn, Yoon-Bong [1 ]
机构
[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Nanomat Proc Res Ctr, 567 Baekjedaero, Jeonju Si 54896, Jeollabuk Do, South Korea
基金
新加坡国家研究基金会;
关键词
Field-effect transistor; Non-enzymatic; Glucose sensor; ZnO nanorod; Iron oxide; BIOSENSORS; NANOSTRUCTURES; ELECTRODES; NANOWIRES; NANOTUBES;
D O I
10.1016/j.elecom.2017.03.006
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Herein, we report a non-enzymatic glucose sensor field-effect transistor (FET) based on vertically-oriented zinc oxide nanorods modified with iron oxide (Fe2O3-ZNRs), Compared with ZnO-based non-enzymatic glucose sensors, which show poor sensing performances, modification of ZnO with Fe2O3 dramatically enhances the sensing behavior of the fabricated non-enzymatic FET glucose sensor due to the excellent electrocatalytic nature of Fe2O3. The fabricated non-enzymatic FET sensor showed excellent catalytic activity for glucose detection under optimized conditions with a linear range up to 18 mM, detection limits down to-12 phi, excellent selectivity, good reproducibility and long-term stability. Moreover, the fabricated FET sensor detected glucose in freshly drawn mouse whole blood and serum samples. The developed FET sensor has practical applications in real samples and the solution-based synthesis process is cost effective. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:107 / 111
页数:5
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