Graphene spin valve devices

被引:356
作者
Hill, Ernie W. [1 ]
Geim, Andre K.
Novoselov, Konstantin
Schedin, Frederik
Blake, Peter
机构
[1] Univ Manchester, Sch Comp Sci, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
基金
英国工程与自然科学研究理事会;
关键词
magnetoresistive devices; soft magnetic films; thin films;
D O I
10.1109/TMAG.2006.878852
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Graphene-a single atomic layer of graphite-is a recently found two-dimensional (2-D) form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to inject polarized spins into graphene, and a 10% change in resistance has been observed as the electrodes switch from the parallel to the antiparallel state. This coupled with the fact that a field-effect electrode can modulate the conductivity of these graphene films makes them exciting potential candidates for spin electronic devices.
引用
收藏
页码:2694 / 2696
页数:3
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